14nm FinFet Fabrication
FinFet manufacturing is novel, non-intuitive, and difficult to decode simply from reading research papers. It presents a range of non-traditional fabrication methodologies that even veteran device engineers find disorienting.
This one-day course demystifies the science of FinFet fabrication by presenting a technically accurate explanation of the processing operations required to manufacture a 14 FinFet. The entire front-end fabrication process is presented in step-by-step detail using high-quality 3D illustrations and TEMs of real-world FinFet devices. The key manufacturing issues associated with each step of the process are discussed, as well as the central differences between FinFet and planar manufacturing.
The course is presented in a highly visual format with detailed high-quality color illustrations of every aspect of the FinFet fabrication process. All aspects of the 14nm fabrication process are presented in depth and gate-last integration methodologies are presented as well as FinFet-on-SOI.
The final section of the course looks ahead to the 10nm node and the changes to FinFet structure that this node will present. Candidate devices for the 7nm nodes are also discussed.
Download this seminar brochure as a .pdf file
Date: To Be Announced
Location: To Be Announced
- A full day of instruction by an industry expert with an in-depth understanding
of the course material.
- A high quality set of course notes that are in full color.
- Continental breakfast, hot buffet lunch and snacks at the morning and afternoon
This course is intended for:
- Device, Test and Process engineers
- Failure analysis engineers
- Equipment engineers
- Fab interface engineers
- Patent Attorneys
- Managers and other personnel who desire a deeper understanding 22nm FinFet processing
- Introduction to the basic modules
- Shallow Trench Isolation & Well formation - the new reality
- STI for FinFET-on-bulk versus STI for FinFET-on-SOI
- Fin Fabrication: Self-Aligned Double Patterning (SADP)
- FinFET gate-last hi-k/Metal gate integration methodology
- Replacement gate metallurgy & integration strategies for FinFETs
- Strained silicon using SiC and SiGe replacement Source/Drains
- Titanium “Salicidation” integration methodology
- Key FinFET fabrication issues and their solutions
- Line-Etch-Line-Etch (LELE) Double patterning
- SADP for Gate electrode fabrication & the first four layers of metal
- Air gap dielectrics
- Back-end capacitor formation details
- How will the 10nm FinFET differ from the 14nm FinFET?
- What options are available for the 10nm node?
- Nanowires - the sub-10nm node option
Jerry Healey has been a technical professional in the semiconductor industry for over 25 years, 8 years of which were spent as a Device Engineer at Motorola Semiconductor. He was formerly an instructor for UC Berkeley Extension (College of Engineering), and more recently was employed as a Process Integration Engineer at the Advanced Technology Development Facility, where he worked on advanced technology node development.
He is a renowned lecturer in the field of silicon processing, and his areas of expertise include process integration, technology transfer of new processes from R&D into manufacturing, 3D Packaging and FinFET fabrication. His audiences remember him for the breadth of his knowledge regarding semiconductor manufacturing, his engaging lecture style, and the insightful 3D color graphics he uses to illustrate his lectures.
An award winning public speaker, Mr. Healey has taught numerous courses to thousands of practicing engineers and scientists over the past 15 years. He has also authored numerous papers in the field of silicon processing, and is currently the president of Threshold Systems, a firm that provides consulting services and technical training seminars to the semiconductor industry.
“The level of reverse engineering in this course is incredible and the instructor’s knowledge of silicon processing is excellent. I am gong to send all of my direct reports to this course.” – S. Richardson
“The level of detail in this course is very impressive and the 3D graphics were most enlightening.” - Jin Yung