ADVANCED CMOS TECHNOLOGY 2016 (THE 14/10/7 NM NODES)
The course has been newly updated to include all of the latest developments in CMOS technology and will be technically current through November 2016.
The relentless drive in the semiconductor industry for smaller, faster and
cheaper integrated circuits has driven the industry to the 14 nm node and
ushered in a new era of high-performance 3-dimensional transistor structures.
The speed, computational power, and enhanced functionality of ICs based on this
advanced technology promise to transform both our work and leisure environments.
However, the implementation of this technology has opened a Pandora’s box of
manufacturing issues as well as set the stage for a range of manufacturing
challenges that require revolutionary new process methodologies as well as
innovative, new equipment for the 14/10nm and the upcoming 7/5nm nodes. This
seminar addresses all of these manufacturing issues with technical depth and
conceptual clarity, and presents leading-edge process solutions to the new and
novel set of problems presented by 14nm and 10 nm FinFET technology and previews
the upcoming manufacturing issues of the 7/5 nm nodes.
The central theme of
this seminar is an in-depth presentation of the key 14/10 nm node technical
issues: CD control, defectivity, high-k/metal gate, EUV lithography, mobility
enhancement, Copper/low-k integration and FinFet, planar and SOI devices. A
detailed 3D Flash memory process flow will be presented as well as a detailed
7/5nm nanowire processing sequence.
A key part of the course is a visual survey of leading-edge devices in Logic
and Memory presented by the Senior Technology Analyst of the world’s leading
reverse engineering firm. His lecture is a visual feast of TEMs and SEMs of all
of the latest and greatest devices being manufactured and is one of the
highlights of the course.
An update on the status of EUV lithography will be also be presented by a
world-class lithographer who manages an EUV tool. His explanations of how this
technology works, and the future role it will play, are enlightening as they are
Finally, a detailed technology roadmap for the future of Logic, SOI, Flash
Memory and DRAM process integration, as well as 3D packaging and 3D Monolithic
fabrication will also be discussed.
Each section of the course will present the relevant technical issues in a
clear and comprehensible fashion as well as discuss the proposed range of
solutions and equipment requirements necessary to resolve each issue. In
addition, the lecture notes are profusely illustrated with extensive 3D
illustrations rendered in full-color.
Download this seminar brochure as a .pdf file/a>
|November 2, 3, 4, 2016
3081 Zanker Road,
San Jose, California, 95134
Registration is now closed.
- Three days of instruction by industry experts with comprehensive, in-depth knowledge of the subject material
- A high quality set of full-color lecture notes (a $495 value), including SEM & TEM micrographs of real- world IC structures that illustrate key points
- Continental breakfast, hot buffet lunch, and coffee, beverages, & snacks served at both morning and afternoon breaks
Who is the seminar intended for:
- Equipment Suppliers & Metrology Engineers
- Fabless Design Engineers and Managers
- Foundry Interface Engineers and Managers
- Device and Process Engineers
- Design Engineers
- Product Engineers
- Process Development & Process Integration Engineers
- Process Equipment Marketing Managers
- Materials Supplier Marketing Managers & Applications Engineers
1. Process integration. The 14nm technology node represents a landmark in
semiconductor manufacturing and it employs transistors that are substantially
faster than anything ever previously fabricated. However, such performance comes
at a significant increase in processing complexity and requires the solution of
some very fundamental scaling and fabrication issues, as well as the
introduction of radical, new approaches to semiconductor manufacturing. This
section of the course highlights the key changes introduced at the 14nm and
describes the technical issues that had to be resolved in order to make this
node a reality.
- The enduring myth of a technology node
- Market forces: the shift to mobile
- The Idsat equation
motivations for High-k/Metal gates, strained Silicon
- Sevice scaling metrics
- Ion/Ioff curves, scaling methodology
2. Detailed 14nm FinFET Fabrication Sequence.
The FinFet represents a radical departure in transistor architecture. It also
presents dramatic performance increases as well as novel fabrication issues. The
14nm FinFET is the 2nd generation of non-planar transistor and it involves some
radical changes in manufacturing methodology. The FinFET’s unusual structure
makes its architecture difficult for even experienced processing engineers to
understand. This section of the course drills down into the details of 14nm
FinFet structure and fabrication, highlighting the novel manufacturing issues
this new type of transistor presents. A detailed step-by-step 14nm fabrication
sequence is presented that employs colorful 3D graphics to clearly and
effectively communicate the novel FinFET architecture at each step of the
fabrication process. Attention to key manufacturing pitfalls and specialty
requirements are pointed out at each phase of the manufacturing process.
- A detailed step-by-step 14nm FinFET fabrication process flow
- A listing of all the chemicals used at each processing operation
- Bulk and SOI FinFET integration
- FinFET High-k/Metal Gate integration
- Gate-first and Gate-Last integration methodologies
- Self-Aligned Double Patterning (SADP) applications for fins, Gates
- Contact options for self-alignment
- Manufacturing issues, roadblocks and solutions
3. The 7/5nm Node; Nanowires? Waiting in the wings is the 5nm node. Although this node may be some
evolutionary adaptation of a FinFET, the possibility exists that the 7nm
will see the advent of a new and radically different 3D device known as a
Nanowire. These highly non-classical transistors consist of an array of
ultra-thin silicon wires arranged in either a horizontal or vertical
orientation and which feature gate-all-around control of short channel
effects and a high level of scalability. A detailed process flow of a
vertical Nanowire process will be presented that is beautifully illustrated
with colorful 3D graphics.
- A step-by-step Vertical Nanowire
- Key fabrication details and manufacturing problems
- Vertical versus horizontal Nanowires: advantages and disadvantages
- Nanowire SCE control and scaling
4. Planar Flash & DRAM Memory.
DRAM and planar Flash memory have evolved through through many generations
and multiple incarnations. DRAM memory appears to be near its scaling limit,
and planar Flash has pushed the scaling envelope to extremes. This part of
the course examines the evolution of DRAM memory and the prospects for its
replacement with the Floating Body Cell (FBC). The evolution of planar Flash
will also be examined and the extreme scaling methodologies employed by this
technology will be examined.
- DRAM memory function and nomenclature
- DRAM scaling limits
- The capacitor-less DRAM memory cell
Flash operation and function
- Planar Flash scaling techniques
3D Flash became inevitable
5. 3D Flash Memory. Rumors of the death of Flash memory appear to have been
greatly exaggerated. 3D Flash will not only dramatically increase non-volatile
memory capacity, it will probably add at least three generations to the life of
this memory technology. However, the structure and fabrication of this type of
memory is radically different, even alien, to any traditional semiconductor
fabrication methodology. This section of the course presents a step-by-step
visual description of the unusual manufacturing methodology used to create 3D
Flash memory, focusing on key problem areas and equipment opportunities.
- staircase fabrication methodology
- the role of ALD in 3D Flash fabrication
- controlling CDs in tall, vertical structures
- 3D Flash operation
challenges and solutions
6. Advanced Lithography. Lithography is the “heartbeat” of
semiconductor manufacturing and is also the single most expensive operation in
any fabrication process. Without further advances in lithography continued
scaling would difficult, if not impossible. However the art and science of
photolithography has experienced serious delays and setbacks that have forced
the development of innovative new technologies. This section of the course
begins with a concise and technically correct introduction to the subject and
then provides in-depth insights into the latest developments in
photolithography. Special attention is paid to EUV lithography, its capability,
characteristics and the technical problems delaying its introduction.
- Physical Limits of Lithography Tools
- Immersion Lithography – principles and practice
- Double, Triple and Quadruple patterning
- EUV Lithography: status, problems and solutions
- Resolution Enhancement Technologies
- Photoresist: chemically amplified resist issues
- Emerging Lithography Technologies (DSA, Imprint etc.)
7. Emerging Memory Technologies. There are at least four novel
memory technologies waiting in the wings. Unlike traditional Flash memory that
depend on electronic charge to store data, these memory technologies rely on
resistance change. Each type of memory has its own respective advantages and
disadvantages and each one has the potential to play an important role in the
evolution of electronic memory.
This section of the course will examine each type memory, discuss how it
works, and what its relative advantages are in comparison with other new
- Cross-point memory; separating the hype from the reality
- Phase Change Memory (PCRAM)
- Resistive RAM (ReRAM) – novel and comes in two variations
- Spin Torque Transfer RAM (STT-RAM) – the brightest prospect?
8. Survey of leading edge devices.
This part of the course presents a visual feast of TEMs and SEMs of real-world,
leading edge devices for Logic, DRAM and Flash memory. The key architectural
characteristics for a wide range of key devices will be presented and the
engineering trade-offs and compromises that resulted in their specific
architectures will be discussed. A representative of the world’s leading chip
reverse engineering firm will present the section of the course.
9. 3D Packaging Versus 3D Monolithic Fabrication.
Unlike all other forms of advanced packaging that communicate by routing
signals off the chip, 3D packaging permits multiple chips to be stacked on
top of each other, and to communicate with each other using Thru-Silicon
Vias (TSVs), as if they were all one unified microchip. An alternate is the
3D Monolithic approach, in which one or more layers of devices are
fabricated on a pre-existing device, and electrically connected together
employing standard nano-dimensional interconnects. Both approaches have
advantages and disadvantages and promise to create a revolution in the
functionality, performance and the design of electronic systems.
part of the course identifies the underlying technological forces that have
driven the development of Monolithic fabrication and 3D packaging, how they
are designed and manufactured, and what the key technical hurdles are to the
widespread adoption of these revolutionary technologies.
technology: design, processing and production
- Interposers: the shortcut
to 3D packaging
- The 3D Monolithic fabrication process
- Annealing 3D
- The Internet of Things (IoT).
10. The Way forward: a CMOS technology forecast.
Ultimately, all good things must come to an end, and the end of classical (bulk,
planar) CMOS has arrived. No discussion of advanced CMOS technology is complete
without a peek into the future, and this final section of the course looks ahead
to the 7/5/3.5nm CMOS nodes and forecasts the evolution of CMOS device
technology for Logic, DRAM and Flash memory.
- The two possible paths forward in CMOS device architecture (FinFETs
vs UTB SOI)
- SOI, how it works and why it is important
- The transition to 3D devices
- New nanoscale effects and their impact on CMOS device architecture
- Is Moore’s law finally coming to an end?
- Future devices: Quantum well devices, Nanowires, Tunnel FETs,