ADVANCED CMOS TECHNOLOGY 2017 (THE 14/10/7 NM NODES)
The course has been newly updated to include all of the latest developments in CMOS technology and will be technically current through October 2017.
The relentless drive in the semiconductor industry for smaller, faster and cheaper integrated circuits has driven the industry to the 10 nm node and ushered in a new era of high-performance three-dimensional transistor structures. The speed, computational power, and enhanced functionality of ICs based on this advanced technology promise to transform both our work and leisure environments. However, the implementation of this technology has opened a Pandora’s box of manufacturing issues as well as set the stage for a range of manufacturing challenges that require revolutionary new process methodologies as well as innovative, new equipment for the 14/10/7nm nodes and the upcoming 5/3nm nodes. This seminar addresses all of these manufacturing issues with technical depth and conceptual clarity, and presents leading-edge process solutions to the new and novel set of problems presented by 10nm and 7 nm FinFET technology and previews the upcoming manufacturing issues of the 5/3 nm nodes.
The central theme of this seminar is an in-depth presentation of the key 14/10/7 nm node technical issues: CD control, defectivity, high-k/metal gate, EUV lithography, mobility enhancement, Copper/low-k integration and FinFet, planar and SOI devices. Detailed 3D NAND Flash memory process flows will be presented as well as a detailed 5nm nanowire processing sequence.
A key part of the course is a visual survey of leading-edge devices in Logic and Memory presented by the Technology Analyst Emeritus of the world’s leading reverse engineering firm. His lecture is a visual feast of TEMs and SEMs of all of the latest and greatest devices being manufactured and is one of the highlights of the course.
An update on the status of EUV lithography will be also be presented by a world-class lithographer who manages an EUV tool. His explanations of how this technology works, and the latest EUV breakthroughs, are enlightening as they are insightful.
Finally, a detailed technology roadmap for the future of Logic, SOI, Flash Memory and DRAM process integration, as well as 3D packaging and 3D Monolithic fabrication will also be discussed.
Each section of the course will present the relevant technical issues in a clear and comprehensible fashion as well as discuss the proposed range of solutions and equipment requirements necessary to resolve each issue. In addition, the lecture notes are profusely illustrated with extensive 3D illustrations rendered in full-color.
Download this seminar brochure as a .pdf file
|October 4, 5, 6, 2017
SEMI Headquarters, 673 South Milpitas Blvd.,
Milpitas, California, 94035, USA
Wednesday: 8:30 AM - 5:00 PM
Thursday: 9:00 AM - 5:00 PM
Friday: 9:00 AM - 5:00 PM
- Three days of instruction by industry experts with comprehensive, in-depth knowledge of the subject material
- A high quality set of full-color lecture notes (a $495 value), including SEM & TEM micrographs of real- world IC structures that illustrate key points
- Continental breakfast, hot buffet lunch, and coffee, beverages, & snacks served at both morning and afternoon breaks
Who is the seminar intended for:
- Equipment Suppliers & Metrology Engineers
- Fabless Design Engineers and Managers
- Foundry Interface Engineers and Managers
- Device and Process Engineers
- Design Engineers
- Product Engineers
- Process Development & Process Integration Engineers
- Process Equipment Marketing Managers
- Materials Supplier Marketing Managers & Applications Engineers
1. Process integration. The 10/7nm technology nodes represent a landmark in semiconductor manufacturing and they employs transistors that are faster and smaller than anything previously fabricated. However, such performance comes at a significant increase in processing complexity and requires the solution of some very fundamental scaling and fabrication issues, as well as the introduction of radical, new approaches to semiconductor manufacturing. This section of the course highlights the key changes introduced at the 10/7nm nodes and describes the technical issues that had to be resolved in order to make these nodes a reality.
- The enduring myth of a technology node
- Market forces: the shift to mobile
- The Idsat equation
- The motivations for High-k/Metal gates, strained Silicon
- Sevice scaling metrics
- Ion/Ioff curves, scaling methodology
2. Detailed 14/10nm Fabrication Sequence.
The FinFet represents a radical departure in transistor architecture. It also presents dramatic performance increases as well as novel fabrication issues. The 14/10nm FinFETs are the 2nd & 33rd generation of non-planar transistor and involve some radical changes in manufacturing methodology. The FinFET’s unusual structure makes its architecture difficult for even experienced processing engineers to understand. This section of the course drills down into the details of 14/10nm FinFet structure and fabrication, highlighting the novel manufacturing issues this new type of transistor presents. A detailed step-by-step 14/10nm fabrication sequence is presented that employs colorful 3D graphics to clearly and effectively communicate the novel FinFET architecture at each step of the fabrication process. Attention to key manufacturing pitfalls and specialty requirements are pointed out at each phase of the manufacturing process.
3. The 7/5nm Node; Nanowires?
Waiting in the wings is the 5nm node. Although this node may be some evolutionary adaptation of a FinFET, the possibility exists that the 7/5nm will see the advent of a new and radically different 3D device known as a Nanowire. These highly non-classical transistors consist of an array of ultra-thin silicon wires arranged in either a horizontal or vertical orientation and which feature gate-all-around control of short channel effects and a high level of scalability. A detailed process flow of a vertical Nanowire process will be presented that is beautifully illustrated with colorful 3D graphics.
- A step-by-step Vertical Nanowire fabrication process
- Key fabrication details and manufacturing problems
- Vertical versus horizontal Nanowires: advantages and disadvantages
- Nanowire SCE control and scaling
4. Planar Flash & DRAM Memory.
DRAM and planar Flash memory have evolved through through many generations
and multiple incarnations. DRAM memory appears to be near its scaling limit,
and planar Flash has pushed the scaling envelope to extremes. This part of
the course examines the evolution of DRAM memory and the prospects for its
replacement with the Floating Body Cell (FBC). The evolution of planar Flash
will also be examined and the extreme scaling methodologies employed by this
technology will be examined.
- DRAM memory function and nomenclature
- DRAM scaling limits
- The capacitor-less DRAM memory cell
- Planar Flash operation and function
- Planar Flash scaling techniques
- Why 3D Flash became inevitable
5. 3D NAND Flash Memory.
The advent of 3D NAND Flash memory is a game changer. 3D NAND Flash not only dramatically increases non-volatile memory capacity, it will also add at least three generations to the life of this memory technology. However, the structure and fabrication of this type of memory is radically different, even alien, to any traditional semiconductor fabrication methodology. This section of the course presents a step-by-step visual description of the unusual manufacturing methodology used to create 3D Flash memory, focusing on key problem areas and equipment opportunities.
- staircase fabrication methodology
- the role of ALD in 3D Flash fabrication
- controlling CDs in tall, vertical structures
- detailed sequential video presentation of Samsung 3D NAND Flash
- Intel-Micron 3D NAND Flash fabrication sequence
- Toshiba BICS NAND Flash fabrication sequence
6. Advanced Lithography.
Lithography is the “heartbeat” of semiconductor manufacturing and is also the single most expensive operation in any fabrication process. Without further advances in lithography continued scaling would difficult, if not impossible. Recently there have been significant breakthroughs in Extreme Ultra Violet (EUV) lithography that promise to radically alter and greatly simplify the way chips are manufactured. This section of the course begins with a concise and technically correct introduction to the subject and then provides in-depth insights into the latest developments in photolithography. Special attention is paid to EUV lithography, its capability, characteristics and the new developments in this field.
- Physical Limits of Lithography Tools
- Immersion Lithography – principles and practice
- Double, Triple and Quadruple patterning
- EUV Lithography: status, problems and solutions
- Resolution Enhancement Technologies
- Photoresist: chemically amplified resist issues
7. Emerging Memory Technologies.
There are at least four novel memory technologies waiting in the wings. Unlike traditional memory technologies that depend on electronic charge to store data, these memory technologies rely on resistance changes. Each type of memory has its own respective advantages and disadvantages and each one has the potential to play an important role in the evolution of electronic memory.
This section of the course will examine each type memory, discuss how it works, and what its relative advantages are in comparison with other new memory types.
- Cross-point memory; separating the hype from the reality
- Phase Change Memory (PCRAM)
- Resistive RAM (ReRAM) – a novel approach that comes in two variations
- Spin Torque Transfer RAM (STT-RAM) – the brightest prospect?
8. Survey of leading edge devices.
This part of the course presents a visual feast of TEMs and SEMs of real-world,
leading edge devices for Logic, DRAM and Flash memory. The key architectural
characteristics for a wide range of key devices will be presented and the
engineering trade-offs and compromises that resulted in their specific
architectures will be discussed. A representative of the world’s leading chip
reverse engineering firm will present the section of the course.
9. 3D Packaging Versus 3D Monolithic Fabrication.
Unlike all other forms of advanced packaging that communicate by routing signals off the chip, 3D packaging permits multiple chips to be stacked on top of each other, and to communicate with each other using Thru-Silicon Vias (TSVs), as if they were all one unified microchip. An alternate is the 3D Monolithic approach, in which a second device layer is fabricated on a pre-existing device layer and electrically connected together employing standard nano-dimensional interconnects. Both approaches have advantages and disadvantages and promise to create a revolution in the functionality, performance and the design of electronic systems.
This part of the course identifies the underlying technological forces that have driven the development of Monolithic fabrication and 3D packaging, how they are designed and manufactured, and what the key technical hurdles are to the widespread adoption of these revolutionary technologies.
- TSV technology: design, processing and production
- Interposers: the shortcut to 3D packaging
- The 3D Monolithic fabrication process
- Annealing 3D Monolithic structures
- The Internet of Things (IoT).
10. The Way forward: a CMOS technology forecast.
Ultimately, all good things must come to an end, and the end of classical (bulk,
planar) CMOS has arrived. No discussion of advanced CMOS technology is complete
without a peek into the future, and this final section of the course looks ahead
to the 7/5/3.5nm CMOS nodes and forecasts the evolution of CMOS device
technology for Logic, DRAM and Flash memory.
- The two possible paths forward in CMOS device architecture (FinFETs vs UTB SOI)
- SOI, how it works and why it is important
- The transition to 3D devices
- New nanoscale effects and their impact on CMOS device architecture and materials
- Is Moore’s law finally coming to an end?
- Future devices: Quantum well devices, Nanowires, Tunnel FETs, Quantum Wires