2D Material Beats Graphene
posted on March 09, 2015 13:04
PORTLAND, Ore. — Two-dimensional (2D) materials like graphene are predicted to succeed silicon at the end of the International Technology Roadmap for Semiconductors (ITRS) circa 2028. Graphene is the most popular, but scientists are also investigating other "miracle materials" including transition metal dichalcogenides (TMDs) such as molybdenum disulphide (MoS2). Now a new 2D material — black phosphorus — is being hawked as solving graphene's problems.
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More Lithography Options?
posted on March 09, 2015 13:03
Lithographers face some tough decisions at 10nm and beyond. At these nodes, IC makers are still weighing the various patterning options. And to make it even more difficult, lithographers could soon have some new, and potentially disruptive, options on the table.
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Samsung’s V-NAND Flash at the 2015 ISSCC –The Only Way Left is Up
posted on March 09, 2015 13:02
Samsung continued their 3D NAND march with an impressive presentation at the 2015 IEEE International Solid-State Circuits Conference (ISSCC) in San Francisco on February 24th. Their presentation, “A 128Gb 3b/cell V-NAND Flash Memory with 1Gb/s I/O Rate”, listed only 34 authors this time compared to 46 last year.
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Global Semiconductor Industry Posts Highest-Ever January Sales
posted on March 09, 2015 13:01
WASHINGTON—March 2, 2015—The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing and design, today announced that worldwide sales of semiconductors reached $28.5 billion for the month of January 2015, the industry’s highest-ever January total and an increase of 8.7 percent from January 2014 when sales were $26.3 billion.
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ASML announces a new high for EUV productivity
posted on March 02, 2015 11:05
TAIPEI, Taiwan -- ASML confirmed that its customer Taiwan Semiconductor Manufacturing Company Limited (TSMC, 台積電) has successfully exposed more than 1000 wafers on an NXE:3300B EUV system in a single day, an important step toward insertion of EUV lithography in volume production of semiconductors, according to the company.
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Inside The Hybrid Memory Cube
posted on March 02, 2015 11:04
The memory bandwidth requirements for today’s high-performance computing applications and next-generation networking applications have increased beyond what conventional memory architectures can provide. For example in a typical 400G networking application, packet buffer bandwidth requirement could be as high as 2,000 Gb/s.
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14nm FinFET process, Galaxy S6 crucial to Samsung semiconductor business
posted on March 02, 2015 11:03
The debut of Samsung Electronics's new flagship smartphone the Galaxy S6 at the upcoming MWC 2015 will mark the world's first smartphone powered by a 14nm 3D FinFET processor and could also serve as a turning point for the vendor's semiconductor business.
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Directed Self Assembly Hot Topic at SPIE
posted on March 02, 2015 11:02
At this week’s SPIE Advanced Lithography Symposium in San Jose, Calif., the hottest three-letter acronym is less EUV and more DSA, as in directed self-assembly.
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Samsung Wants Moore’s Law End, Analyst Says
posted on March 02, 2015 11:01
Samsung Electronics, the world’s largest smartphone maker, may be looking forward to the end of Moore’s Law as a way to gain a new competitive edge, according to Mehdi Hosseini, an analyst with Susquehanna International Group.
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UPDATE 2-Applied Materials hurt by low demand for chipmaking machinery
posted on February 17, 2015 18:05
(Reuters) - Applied Materials Inc said new orders in its business that makes semiconductor equipment and made-to-order chips fell in the first quarter due to weak demand from foundry customers.
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